Nowadays it is possible to grow high-quality graphene on large scale using chemical vapor deposition (CVD). What remains a major bottleneck for the industrialization of the material is the transfer of graphene from the growth substrate to a target one. A team of researchers from the University of Cambridge and RWTH Aachen University has now developed a methodology for optimizing simultaneously the growth and the transfer process, showing that it is possible to dry-transfer graphene with high-yield, if the crystallographic orientation of the growth surface is chosen appropriately.
(© Stampfer Lab, RWTH Aachen University)