Banszerus and coworkers have reported the first experimental observation of the spin-orbit gap in bilayer graphene.
Continue reading “First observation of the (tunable) spin-orbit gap in bilayer graphene”An efficient emitter for graphene-base hot electron transistors
Researchers from RWTH Aachen University, AMO GmbH, Stanford University and IHP have demonstrated that heterostructures formed by silicon, molybdenum disulfide (MoS2) and graphene are potential candidates as emitter-diodes of graphene-base hot-electron transistors.
Continue reading “An efficient emitter for graphene-base hot electron transistors”Non-volatile resistive switching in memristors based on MoS2
Melkamu Belete and colleagues at ELD, AMO and Stanford University have demonstrated non-volatile resistive switching in memristors with vertically aligned 2D layers of molybdenum disulfide (MoS2) as active material.
Continue reading “Non-volatile resistive switching in memristors based on MoS2”